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In our R&D BiMOS semiconductor chip groups at Hitachi Energy Semiconductors, we are developing advanced power semiconductor devices across multiple voltage classes. Our high-quality products are manufactured at internal and external production sites and delivered to customers worldwide across a wide range of applications, including industrial, renewable energy, traction, and e-mobility.

We are currently looking for a motivated R&D Semiconductor Chip Specialist to contribute to the development of next-generation power semiconductor technologies. In this role, you will focus on silicon-based devices (with strong exposure to power diodes) while expanding towards broader device concepts such as IGBTs and MOSFETs.

This position is ideal for candidates with a solid technical foundation in semiconductor device physics and simulation, who are eager to further develop their expertise within a collaborative, high-tech R&D environment.

Do you combine a strong technical background in semiconductor device physics with hands-on experience in simulation and technology development? Are you motivated to take ownership of development tasks while continuously learning and growing? Then we look forward to your application.

How you’ll make an impact

Contribute to the development of next-generation power semiconductor chips, with a strong focus on silicon power diodes and related device technologies
Support the end-to-end technology and product development cycle, from concept and simulation through to validation and reliability assessment
Apply and further develop TCAD simulation models to understand device behavior and optimize performance, yield, and cost
Collaborate closely with process engineers, characterization and reliability teams, ensuring alignment between design and manufacturability
Take ownership of individual work packages or sub-projects, contributing to overall project goals and timelines
Drive continuous improvement through data-driven analysis, modelling, and optimization approaches
Actively contribute to knowledge sharing within the team and build a strong systems-level understanding of semiconductor devices and processes

Your background

Master’s or PhD in Physics, Electrical Engineering, or a related field, with focus on semiconductor device physics
Proven experience in power semiconductor device development, ideally with exposure to silicon power diodes
Strong hands-on experience with TCAD simulation tools (e.g. Sentaurus, COMSOL)
Good understanding of semiconductor device physics, characteristics, and technology development processes
Exposure to cross-functional collaboration with process, characterization, and reliability teams
Initial experience in owning technical tasks or supervising junior profiles is a plus
Familiarity with process integration aspects or modelling approaches is considered an advantage
Self-driven, analytical, and eager to learn and grow in a high-performance R&D environment
Proficiency in English with strong communication and presentation skills

Qualified individuals with a disability may request a reasonable accommodation if you are unable or limited in your ability to use or access the Hitachi Energy career site as a result of your disability. You may request reasonable accommodations by completing a general inquiry form on our website. Please include your contact information and specific details about your required accommodation to support you during the job application process.

This is solely for job seekers with disabilities requiring accessibility assistance or an accommodation in the job application process. Messages left for other purposes will not receive a response.

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